Package Dimensions(mm):
Square Substrate
Oval Substrate
Absolute Maximum Ratings at Ta=25℃
Item |
Symbol |
Absolute Maximum Rating |
Unit |
DC Forward Current |
IF |
1050 |
mA |
Peak Forward Current |
IF |
1200 |
mA |
Reverse Voltage |
VR |
5 |
V |
Power Dissipation |
PD |
30 |
W |
Electrostatic discharge |
ESD |
±4500 |
V |
Operation Temperature |
Topr |
-40~+80 |
℃ |
Storage Temperature |
Tstg |
-40~+100 |
℃ |
Lead Soldering Temperature |
Tsol |
Max.260℃ for 6 seconds Max. |
|
Life test |
---- |
1000H Luminous intensity weaken< 5%(1050mA,Ta=65℃); 50,000H Luminous intensity weaken < 20% (1050mA,Ta=65℃); |
Electrical Optical Characteristics at Ta=25℃
Parameter Symbol Min. Typ. Max. Unit Test Condition Forward Voltage VF 30.0 --- 34.0 V If=1050mA Reverse Current IR --- --- 50 uA VR=5V 50% Power Angle 2θ1/2 --- 140 --- Deg. IF=1050mA Radiant Power Po 10000 --- 12000 mW IF=1050mA Peak Wavelength λp 420 425 nm IF=1050mA
415
Descriptions:
Power: 30W
Substrate Type: Square and Oval
Wavelength: 420nm +-5nm
Beam Angle: 140deg.
Voltage: 30.0-34.0V Current: 1050mA (10 in series, 3 in parallel) {The chips layout is customizable}
Radiant Power: 10500-12500mW
Additional Heat-sink equipment is recommended when operation temperature is higher than 55 degrees.
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