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IR 10W 850nm Infrared High Power LED

item#: G-10P42ER140A1-IR

Retail price: 0

Wholesale Price:

US$ € CHF CA$ AU$ HK$ £ ￥

9.00

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Product Details

The available IR wavelengths from 700nm, 710nm, 720nm, 730nm, 740nm, 750nm, 760nm, 780nm, 790nm, 800nm, 810nm, 830nm, 850nm, 860nm, 880nm, 890nm, 910nm, 940nm, 960nm, 970nm, 980nm, 1050nm. We offer technology and Custom LED solutions support, If you have any special requirements out of store, please contact us.

Package Dimension(mm):

10W IR 850nm led Square substrate package dimension

Square Substrate

10W IR 850nm led Round substrate package dimension

Round Substrate

Key Features:

• 99.99% gold wire bonding, 1.2mil

• Red copper Subtrate

• Chips: 9pcs* 42mil Chips

• Chips Connection: 3 in series, 3 in parallel (The chips layout is customizable)

• Substrate Type: Round and Square

• Applications: mainly used for surveilance system, CCTV camera, night and machine vistion, medical and other professional equipment

• Extra HEATSINK is required for the LEDs.

Absolute Maximum Ratings at Ta=25℃

Item	Symbol	Absolute Maximum Rating	Unit
DC Forward Current	I_F	1050	mA
Peak Forward Current	I_F	1200	mA
Reverse Voltage	V_R	5	V
Power Dissipation	P_D	10	W
Electrostatic discharge	ESD	±4500	V
Operation Temperature	Topr	-40~+80	℃
Storage Temperature	Tstg	-40~+100	℃
Lead Soldering Temperature	Tsol	Max.260℃ for 6 seconds Max.
Life test	----	1000 H Luminous intensity weaken< 5%(1050mA,Ta=65℃); 50,000 H Luminous intensity weaken < 20% (1050mA,Ta=65℃);

Electrical Optical Characteristics at Ta=25℃

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test Condition
Forward Voltage	V_F	4.5	---	5.1	V	I_f=1050mA
Reverse Current	I_R	---	---	50	uA	VR=5V
50% Power Angle	2θ1/2	---	140	---	Deg.	I_F=1050mA
Radiant Power	Po	800	---	900	mW	I_F=1050mA
Peak Wavelength	λp	845	850	855	nm	I_F=1050mA

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