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Deep Red 660nm 30W High Power LED

item#: G-30P42R140B1-R

Retail price: 0

Wholesale Price:

US$ € CHF CA$ AU$ HK$ £ ￥

23.00

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Product Details

Package Dimensions(mm):

30W deep red 660nm led Square substrate dimensions

Square Substrate

30W 660nm deep red led Oval dimensions

Oval Substrate

Key Features:

• 99.99% gold wire bonding, 1.2mil

• Red copper Substrate

• Chips: 30pcs* Epileds Chips

• Chips Connection: 10 in series, 3 in parallel (The chips layout is customizable)

• Substrate Type: Oval and Square

• Applications: horicultural lighting, chemical equipment, Health care instrument, beauty therapy instrument and other professional lighting

• Extra Heatsink is required for the LED.

Absolute Maximum Ratings at Ta=25℃

Item	Symbol	Absolute Maximum Rating	Unit
DC Forward Current	I_F	1050	mA
Peak Forward Current	I_F	1200	mA
Reverse Voltage	V_R	5	V
Power Dissipation	P_D	30	W
Electrostatic discharge	ESD	±4500	V
Operation Temperature	Topr	-40~+80	℃
Storage Temperature	Tstg	-40~+100	℃
Lead Soldering Temperature	Tsol	Max.260℃ for 6 seconds Max.
Life test	----	1000 H Luminous intensity weaken< 5%(1050mA,Ta=65℃); 50,000 H Luminous intensity weaken < 20% (1050mA,Ta=65℃);

Electrical Optical Characteristics at Ta=25℃

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test Condition
Forward Voltage	V_F	20.0	---	22.0	V	I_f=1050mA
Reverse Current	I_R	---	---	50	uA	VR=5V
50% Power Angle	2θ1/2	---	140	---	Deg.	I_F=1050mA
Luminous Flux	Φ	600	---	800	lm	I_F=1050mA
Peak Wavelength	λp	655	660	665	nm	I_F=1050mA

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