Package Dimensions(mm):

Square Substrate

Oval Substrate
Absolute Maximum Ratings at Ta=25℃
|
Item |
Symbol |
Absolute Maximum Rating |
Unit |
|
DC Forward Current |
IF |
1050 |
mA |
|
Peak Forward Current |
IF |
1200 |
mA |
|
Reverse Voltage |
VR |
5 |
V |
|
Power Dissipation |
PD |
30 |
W |
|
Electrostatic discharge |
ESD |
±4500 |
V |
|
Operation Temperature |
Topr |
-40~+80 |
℃ |
|
Storage Temperature |
Tstg |
-40~+100 |
℃ |
|
Lead Soldering Temperature |
Tsol |
Max.260℃ for 6 seconds Max. |
|
|
Life test |
---- |
1000 H Luminous intensity weaken< 5%(1050mA,Ta=65℃); 50,000 H Luminous intensity weaken < 20% (1050mA,Ta=65℃); |
|
Electrical Optical Characteristics at Ta=25℃
Parameter Symbol Min. Typ. Max. Unit Test Condition Forward Voltage VF 30.0 --- 34.0 V If=1050mA Reverse Current IR --- --- 50 uA VR=5V 50% Power Angle 2θ1/2 --- 140 --- Deg. IF=1050mA Radiant Power Po 11000 --- 13000 mW IF=1050mA Peak Wavelength λp 430 435 nm IF=1050mA
425
Descriptions:
Power: 30W
Substrate Type: Oval and Square
Chips: 30pcs * 45mil Epileds
Wavelength: 430nm +-5nm
Beam Angle: 140deg.
Voltage: 30.0-34.0V Current: 1050mA (10 in series, 3 in parallel), {The chips layout is customizable}
Radiant Power: 11000-13000mW
Additional HEATSINK is required for the LED.
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