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100W IR 810nm High Power LED

item#: G-100P42DR140A1-IR

Retail price: 0

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US$ € CHF CA$ AU$ HK$ £ ￥

86.00

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Product Details

The available IR wavelengths from 700nm, 710nm, 720nm, 730nm, 740nm, 750nm, 760nm, 780nm, 790nm, 800nm, 810nm, 830nm, 850nm, 860nm, 880nm, 890nm, 910nm, 940nm, 960nm, 970nm, 980nm, 1050nm. We offer technology and Custom LED solutions support, If you have any special requirements out of store, please contact us.

Package Dimension(mm):

50W IR 810nm LED square substrate package dimension

Square Substrate

50W IR 810nm led Oval Round substrate package dimension

Oval Substrate

Key Features:

• 99.99% gold wire bonding, 1.2mil

• Chips: 100pcs 42mil Epileds

• Substrate Type: Square and Oval

• Applications: mainly used for Iris scanner, surveilance system, CCTV camera, night and machine vistion, medical and other professional equipment

• Extra HEATSINK is required for the LEDs.

Absolute Maximum Ratings at Ta=25℃

Item	Symbol	Absolute Maximum Rating	Unit
DC Forward Current	I_F	3500	mA
Peak Forward Current	I_F	4000	mA
Reverse Voltage	V_R	5	V
Power Dissipation	P_D	100	W
Electrostatic discharge	ESD	±4500	V
Operation Temperature	Topr	-40~+80	℃
Storage Temperature	Tstg	-40~+100	℃
Lead Soldering Temperature	Tsol	Max.260℃ for 6 seconds Max.
Life test	----	1000 H Luminous intensity weaken< 5%(3500mA,Ta=65℃); 50,000 H Luminous intensity weaken < 20% (3500mA,Ta=65℃);

Electrical Optical Characteristics at Ta=25℃

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test Condition
Forward Voltage	V_F	14.0	---	16.0	V	I_f=3500mA
Reverse Current	I_R	---	---	50	uA	VR=5V
50% Power Angle	2θ1/2	---	140	---	Deg.	I_F=3500mA
Radiant Power	Po	10000	---	12000	mW	I_F=3500mA
Peak Wavelength	λp	805	810	---	nm	I_F=3500mA

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